Characteristics (IRF1010ES) MOSFET transistor
1. Type: N – Channel
2. Drain – Source Breakdown Voltage: 60 V
3. Gate – to Source Voltage, Max: ± 20 V
4. Drain – Source On – State Resistance, Max: 12,000 OHM
5. Continuous Drain Current: 83 A
6. Total Gate Charge: 86.6 NC
7. Power Dissipation: 170 W
8. Package: D2=Pak
# Pin Configuration – Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | Normally connected to GROUND |
| 2 | DRAIN | Normally connected to LOAD |
| 3 | SOURCE | Normally used as TRIGGER to turn ON the MOSFET. |
IRF1010ES is an n-channel enhancement MOSFET designed for high-speed switching applications. It also has low turn ON resistance. Like any other MOSFET, the IRF1010ES is a voltage-controlled device and the MOSFET state is decided by GATE voltage.
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