Diode 1N4002 Polarity and Pinout Characteristics 1N4002 Diode ⇒ Maximum Recurrent Pack Reverse Voltage – 100 V ⇒ Operating and Storage Temperature Range – 65 to + 175 °C ⇒ Maximum Average Forward Output Current – 1 A ⇒ Weight 0.33 grams ⇒ Typical Junction Capital 15 pF …
Read More »Diode 1N4001G Polarity and Pinout
Dimensions 1N4001G Diode 1N4001G Diode has a cathode – and anode +. In the schematic symbol, the tip of the triangle with the line on top of it is the cathode. The cathode is marked in the body of a diode by a band as shown below. Characteristics 1N4001G …
Read More »IRF1010ZL Mosfet transistor
IRF1010ZL MOSFET transistor # Pin Configuration – Pinout 1. Type: N – Channel 2. Drain – Source Breakdown Voltage: 55 V 3. Gate – to Source Voltage, Max: ± 20 V 4. Drain – Source On – State Resistance, Max: 7.500 OHM 5. Continuous Drain Current: 94 A 6. …
Read More »Zener Diode 1N4731
Dimensions Zener Diode (1N4731) Characteristics 1N4731 Zener Diode * Norman Zener Voltage 4.3V * Maximum Forward Voltage at 200 mA:1.2V * Maximum Zener Imperdace at 1 mA: 400 ohm * Zener Voltage Tolerance is ± 10% * Power Dissipation: 1W * Weight: 0.35 grams * Package …
Read More »Bridge rectifier B8S Characteristics
Pin Configuration – (pinout) ⇒ Maximum Forward Voltage Dropper element at 1 A DC: 1.1 V ⇒ Maximum Average Forward Rectified Output Current: 0.5 A ⇒ Maximum Recurrent Peak Reverse Voltage: 800 V ⇒ Maximum RMS Bridge Voltage: 560 V ⇒ Weight: 0.22 grams ⇒ Package: DS – 1S ⇒ Typical …
Read More »Diode 1N4001 Polarity and Pinout
Diode 1N4001 Polarity and Pinout 1N4001 Diode has a cathode – and anode +. In the schematic symbol, the tip of the triangle with the line on top of it is the cathode. The cathode is marked in the body of a diode by a band as shown …
Read More »Bridge rectifier B6S
Bridge rectifier B6S Characteristics ⇒ Maximum Forward Voltage Dropper element at 1 A DC: 1.1 V ⇒ Maximum Average Forward Rectified Output Current: 0.5 A ⇒ Maximum Recurrent Peak Reverse Voltage: 600 V ⇒ Maximum RMS Bridge Voltage: 420 V ⇒ Weight: 0.22 grams ⇒ Package: DS – 1S ⇒ Typical Junction Capacitance: 25 pF …
Read More »2N1481 Bipolar Transistor
# Characteristics of the 2N1481 1. Type – NPN 2. Emitter-Base Voltage: 6 V 3. Collector Dissipation: 5 W 4. Collector-Emitter Voltage: 40 V 5. Collector Current: 1.5 A 6. Collector-Base Voltage: 60 V 7. Transition Frequency – 2 MHz 8. DC Current Gain have -20 to 60 9. Operating and …
Read More »Mosfet IRF1010Z transistor
1. Type: N – Channel 2. Drain – Source Breakdown Voltage: 55 V 3. Gate – to Source Voltage, Max: ± 20 V 4. Drain – Source On – State Resistance, Max: 7.500 OHM 5. Continuous Drain Current: 94 A 6. Total Gate Charge: 63 NC 7. Power Dissipation: 140 W …
Read More »Diode 1A7 Characteristics
Diode 1A7 Characteristics Polarity and Pinout 1A7 Diode has a cathode – and anode +. In the schematic symbol, the tip of the triangle with the line on top of it is the cathode. The cathode is marked in the body of a diode by a band …
Read More »